Abstract: A 224-Gb/s pulse amplitude modulation 4-level (PAM4) ADC-based SerDes receiver (RX) is implemented in a 5-nm FinFET process. The RX consists of a low-noise hybrid analog front-end (AFE) that ...
Abstract: Conventional content addressable memory (BCAM and TCAM) uses specialized 10T/16T bit cells that are significantly larger than 6T SRAM cells. A new BCAM/TCAM is proposed that can operate with ...
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