EDN

200-V MOSFETs cut conduction losses

Two devices have joined iDEAL Semiconductor’s SuperQ 200-V MOSFET portfolio, offering very low RDS(on) in standard power packages.
Compound Semiconductor

Japanese start-up demos diamond MOSFET breakthroughs

Japanese start-up Power Diamond Systems has advanced its proprietary diamond MOSFET technology and, for the first time in the world for a diamond-based device, achieved a breakdown voltage of 550 V ...
IEEE

Temperature Scaling and C–V Modeling of SiC Low-Voltage MOSFETs for IC Design

Abstract: A high-temperature (HT) SPICE model of the silicon carbide (SiC) nMOS and pMOS along with the transient characteristics is presented in this article. This work extends the BSIM4SiC model, ...
IEEE

Low-Parasitic-Inductance Module with Interleaved Vertical PCB Layout for Dynamic Testing of SiC MOSFET Bare Die

Abstract: Dynamic characterization of silicon carbide (SiC) MOSFET bare dies is essential but challenging due to their inherently fast switching speed, which makes them highly susceptible to parasitic ...